FEATURES IS61C6416AL and IS64C6416AL High-speed access time: 12 ns, 15ns Low Active Power: 175 mW (typical) Low Standby Power: 1 mW (typical) CMOS standby IS62C6416AL and IS65C6416AL High-speed access time: 35 ns, 45ns Low Active Power: 50 mW (typical) Low Standby Power: 100 µW (typical) CMOS standby TTL compatible interface levels Single 5V ± 10% power supply Fully static operation: no clock or refresh required Available in 44-pin SOJ package and 44-pin TSOP (Type II) Commercial, Industrial and Automotive temperature ranges available Lead-free available DESCRIPTION The ISSI IS61C6416AL, IS62C6416AL, IS64C6416AL and IS65C6416AL are high-speed, 1,048,576-bit static RAMs organized as 65,536 words by 16 bits. They are fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS61C6416AL, IS62C6416AL, IS64C6416AL and IS65C6416AL are packaged in the JEDEC standard 44-pin 400-mil SOJ and 44-pin TSOP (Type II).
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